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ASTM E 1854 : 2003

Superseded
Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by
superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
Available format(s)

Hardcopy , PDF

Superseded date

11-11-2014

Language(s)

English

Published date

10-07-2003

1.1 This practice sets forth requirements to ensure consistency in neutron-induced displacement damage testing of silicon and gallium arsenide electronic piece parts. This requires controls on facility, dosimetry, tester, and communications processes that affect the accuracy and reproducibility of these tests. It provides background information on the technical basis for the requirements and additional recommendations on neutron testing. In addition to neutrons, reactors are used to provide gamma-ray pulses of intensities and durations that are not achievable elsewhere. This practice also provides background information and recommendations on gamma-ray testing of electronics using nuclear reactors.

1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes. The issues identified and the controls set forth in this practice address the characterization and suitability of the radiation environments. They generally apply to reactor and 14-MeV neutron sources when used for displacement damage testing, and apply to 252Cf testing when this source is used for this application. Facility and environment characteristics that introduce complications or problems are identified, and recommendations are offered as to how problems can be recognized and minimized or solved. This practice may be used by facility users, test personnel, facility operators, and independent process validators to determine the suitability of a specific environment within a facility and of the testing process as a whole, with the exception of the electrical measurements, which are addressed in other standards. Additional information on conducting irradiations can be found in Practices E 798 and F 1190. This practice also may be of use to test sponsors (that is, organizations that establish test specifications or otherwise have a vested interest in the performance of electronics in neutron environments).

1.3 Methods for evaluation and control of undesired contributors to damage are discussed in this practice, and references to relevant ASTM standards and technical reports are provided. Processes and methods used to arrive at the appropriate test environments and specification levels for electronics systems are beyond the scope of this practice; however, the process for determining the 1-MeV equivalent displacement specifications from operational environment neutron spectra should employ the methods X1.3.1 and parameters described herein. Some important considerations are addressed in Appendix X1 through (Nonmandatory information)..

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee
E 10
DocumentType
Standard Practice
Pages
16
PublisherName
American Society for Testing and Materials
Status
Superseded
SupersededBy
Supersedes

ASTM E 1855 : 2015 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
ASTM F 1190 : 2018 Standard Guide for Neutron Irradiation of Unbiased Electronic Components
ASTM E 2450 : 2016 Standard Practice for Application of CaF<inf>2</inf>(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
ASTM F 980 : 2016 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

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$135.86
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