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BS 6493-1.2:1984

Superseded
Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by
superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Semiconductor devices. Discrete devices Recommendations for rectifier diodes
Available format(s)

Hardcopy , PDF

Superseded date

15-07-2000

Language(s)

English

Published date

31-05-1984

National foreword
Committee responsible
Chapter I: General
1. Introductory note
2. Scope
3. Marking of rectifier diodes
Chapter II: Terminology and letter symbols
1. General terms
2. Terms related to ratings and characteristics
2.1 Voltages
2.2 Currents
2.3 Power dissipations
2.4 Other characteristics
3. Letter symbols
3.1 General
3.2 Additional general subscripts
3.3 List of letter symbols
Chapter III: Essential ratings and characteristics
1. General
2. Rating conditions
3. Voltage and current ratings (limiting values)
4. Frequency ratings (limiting values)
5. Power dissipation ratings (limiting values)
6. Temperature ratings (limiting values)
7. Electrical characteristics
7.10 Forward recover time (tfr)(when appropriate)
8. Thermal characteristics
9. Mechanical characteristics and other data
10. Application data
Chapter IV: Methods of measurement
1. Electrical characteristics
1.1 General precautions
1.2 Forward voltage
1.3 Breakdown voltage of avalanche and controlled-
     avalanche rectifier diodes
1.4 Reverse current
1.5 Recovered charge and reverse recovery time (Qr,trr)
1.6 Forward recovery time tfr and peak forward recovery
     voltage VFRM
2. Thermal measurements
2.1 Reference-point temperature
2.2 Thermal resistance and transient thermal impedance
3. Verification of ratings (limiting values)
3.1 Surge (non-repetitive) forward current
3.2 Non-repetitive peak reverse voltage
3.3 Peak reverse power (repetitive or non-repetitive)
     (PRRM, PRSM) of avalanche and controlled-avalanche
     rectifier diodes
3.4 Peak case non-rupture current
4. Thermal cycling load test
Chapter V: Acceptance and reliability
Section I - Type tests and routine tests
1. Type tests
2. Routine tests
3. Measuring and test methods
Section II - Electrical endurance tests
1. General requirements
2. Specific requirements
Appendix - Calculation methods for time varying load
           capability

Recommendations for the use of rectifier diodes.

Committee
EPL/47
DocumentType
Standard
Pages
60
PublisherName
British Standards Institution
Status
Superseded
SupersededBy

Standards Relationship
IEC 60747-2:2016 Identical

BS QC 750103:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
BS IEC 60747-10:1991 Semiconductor devices Generic specification for discrete devices and integrated circuits
BS QC 750107:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications
BS QC 750108:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
BS EN 120000:1996 Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices
BS QC 750106:1993 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
BS QC 720100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for optoelectronic devices
BS QC700000(1991) : 1991 HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRIC COMPONENTS - GENERIC SPECIFICATION FOR DISCRETE DEVICES AND INTEGRATED CIRCUITS
BS QC 750109:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
BS QC 750102:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification
BS QC 750104:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications

BS 6493-1.1:1984 Semiconductor devices. Discrete devices General

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