Customer Support: 131 242

  • There are no items in your cart
We noticed you’re not on the correct regional site. Switch to our AMERICAS site for the best experience.
Dismiss alert

BS PD9002(1976) : LATEST

Superseded
Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Superseded date

23-07-2013

Published date

23-11-2012

DocumentType
Standard
PublisherName
British Standards Institution
Status
Superseded

BS 9561:1979 Specification for lever operated switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications
BS 9751:1979 Blank detail specification for fixed insulated (unshielded) r.f. inductors at the full assessment level
BS 9612 N016:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9612 N017:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9751 N0001:1980 Detail specification for fixed insulated (unshielded) radio frequency inductors. Wire wound on ferrite, iron dust or phenolic cylindrical former. Full assessment level
BS 9364 N017:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9041:1978 Rules for the preparation of detail specifications for gas filled microwave switching tubes of assessed quality: tunable and broadband TR tubes and TR limiters. Full assessment level
BS 9734:1978 Sectional specification for pulse transformers of assessed quality for use in electronic equipment: full assessment level
BS 9364 N011:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS 9612 N005:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9364 N013:1979 Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS 9073 N0034:1978 Detail specification for fixed tantalum electrolytic capacitors. Porous anode, polar non-solid electrolyte. Tubular insulated metallic case, PTFE/elastomer seal, axial wire terminations. Full plus additional assessment level
BS 9612 N007:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9612 N008:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9364 N008 and N010:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9612 N020:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9526 N0003:1979 Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level
BS 9612 N018:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9563:1979 Specification for rotary (manual) switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications
BS 9075 N023:1978 Detail specification for fixed monolithic ceramic dielectric capacitors (type 1B). Rectangular non-metallic case, centred wires on one face. Full assessment level
BS 9612 N006:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, 47 U/2, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9364 N007 and N009:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS 9526 N0002:1979 Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, metal fixing flanges, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level
BS 9612 N019:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9564:1980 Specification for push-button switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications
BS 9450:1975 Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test
BS 9040:1978 Specification for gas-filled microwave switching tubes of assessed quality: generic data and methods of test
BS 9526 N0001:1978 Detail specification for multi-contact edge socket electrical connectors. Single or double sided, closed ended, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level
BS 9612 N009:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9612 N010:1979 Detail specification for cold welded seal quartz crystal units for oscillator applications. DK enclosure, 6.0 to 25 MHz frequency range. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9364 N012:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9075 N024:1978 Detail specification for fixed monolithic ceramic dielectric capacitors (type 2C1). Rectangular non-metallic case, centred wires on one face. Full assessment level
BS CECC 30401 023:1979 Harmonized detail specification for fixed metallized polyethylene terephthalate film dielectric d.c. capacitors. Rectangular insulated non-metallic case, rigid radial terminations. Full assessment level
BS 9074 N007:1978 Detail specification for fixed polystyrene film dielectric extended foil capacitors. Rectangular non-metallic case, unidirectional terminations. Full plus additional assessment level
BS 9612 N004:1977 Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, 47 U/2, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level
BS 9612 N021:1979 Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level
BS 9364 N016:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level

View more information
Sorry this product is not available in your region.

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.

Need help?
Call us on 131 242, then click here to start a Screen Sharing session
so we can help right away! Learn more