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IEC 60749-34:2010

Current
Current

The latest, up-to-date edition.

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English, English - French, Spanish, Castilian

Published date

28-10-2010

Publisher

International Electrotechnical Committee

FOREWORD
1 Scope and object
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Test conditions
7 Precautions
8 Measurements
9 Failure criteria
10 Summary

IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include:
- the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode;
- information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.

Committee
TC 47
DevelopmentNote
Supersedes IEC PAS 62206. (03/2004) Stability Date: 2015. (10/2012)
DocumentType
Standard
Pages
26
PublisherName
International Electrotechnical Committee
Status
Current
Supersedes

CEI EN 60747-15 : 2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
BS EN 60749-23 : 2004 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
EN 60749-23:2004/A1:2011 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
BS IEC 60747-6:2016 Semiconductor devices Discrete devices. Thyristors
I.S. EN 60747-15:2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
07/30162213 DC : 0 BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
BS EN 60747-15:2012 Semiconductor devices. Discrete devices Isolated power semiconductor devices
IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
13/30264591 DC : 0 BS EN 60747-14-6 ED 1.0 - SEMICONDUCTOR DEVICES - PART 14-6: SEMICONDUCTOR SENSORS - HUMIDITY SENSOR
BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
13/30264600 DC : 0 BS EN 60747-14-8 ED 1.0 - SEMICONDUCTOR DEVICES - PART 14-8: SEMICONDUCTOR SENSORS - CAPACITIVE DEGRADATION SENSOR OF LIQUID
04/30114936 DC : DRAFT JUN 2004 EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
IEC 60749-23:2004+AMD1:2011 CSV Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors
05/30135225 DC : DRAFT JUN 2005 IEC 60749-9 ED 2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
13/30264596 DC : 0 BS EN 60747-14-7 ED 1.0 - SEMICONDUCTOR DEVICES - PART 14-7: SEMICONDUCTOR SENSORS - FLOW METER
I.S. EN 60749-23:2004 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE

IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60749-23:2004+AMD1:2011 CSV Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

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Hardcopy - English
PDF 1 User - English
PDF 3 Users - English
PDF 5 Users - English
PDF 9 Users - English
Hardcopy - English - French
PDF 1 User - English - French
PDF 3 Users - English - French
PDF 5 Users - English - French
PDF 9 Users - English - French
Hardcopy - Spanish
PDF 1 User - Spanish
PDF 3 Users - Spanish
PDF 5 Users - Spanish
PDF 9 Users - Spanish
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