Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of arsenic in silicon

Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English

Published date

08-11-2010

Publisher

International Organization for Standardization

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 10¹⁶ atoms/cm³ and 2,5 x 10²¹ atoms/cm³, and to crater depths of 50 nm or deeper.

DevelopmentNote	Supersedes ISO/DIS 12406. (11/2010)
DocumentType	Standard
Pages	13
PublisherName	International Organization for Standardization
Status	Current

Standards	Relationship
BS ISO 12406:2010	Identical
NEN ISO 12406 : 2010	Identical
SAC GB/T 32495 : 2016	Identical

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