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    • Transistors
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    IEC 62373-1:2020

    Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET

    International Electrotechnical Committee

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    IEC 60747-9:2019

    Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

    International Electrotechnical Committee

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    IEC 60747-7:2010+AMD1:2019

    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

    International Electrotechnical Committee

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    IEC 60747-4 : 2.1

    SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS

    International Electrotechnical Committee

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    IEC 60747-7:2010/AMD1:2019

    Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

    International Electrotechnical Committee

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    IEC 60747-8 : 3.0

    SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS

    International Electrotechnical Committee

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    IEC 62899-503-1:2020

    Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor

    International Electrotechnical Committee

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    ASTM F 996 : 2011 : R2018

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics

    American Society for Testing and Materials

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    NEN-IEC 62373-1:2020

    Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

    Netherlands Standards

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    BS IEC 60747-9:2019

    Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)

    British Standards Institution

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