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ASTM
ASTM F 1630 : 2000

ASTM F 1630 : 2000

Withdrawn

Withdrawn

A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.

Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)

Available format(s)

Hardcopy , PDF

Withdrawn date

05-11-2013

Language(s)

English

Published date

10-12-2000

Publisher

American Society for Testing and Materials

CONTAINED IN VOL. 10.05, 2001 Determines the electrically active boron, phosphorus, arsenic, aluminium, antimony, and gallium concentration in single crystal silicon. This method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5.0 ppba for each of the electrically active elements.

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon.

1.2 This test method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5.0 ppba for each of the electrically active elements.

1.3 The concentration for each impurity/dopant can be obtained by application of Beer's Law. Calibration factors are given for each element.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee
F 01
DocumentType
Test Method
Pages
6
PublisherName
American Society for Testing and Materials
Status
Withdrawn

ASTM F 1723 : 1996 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
ASTM F 1708 : 2002 Standard Practice for Evaluation of Granular Polysilicon by Meter-Zoner Spectroscopies (Withdrawn 2003)

ASTM E 177 : 2014 : REDLINE Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods
ASTM E 275 : 2008 Describing and Measuring Performance of Ultraviolet and Visible Spectrophotometers
ASTM F 723 : 1999 Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon (Withdrawn 2003)
ASTM F 1723 : 1996 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
ASTM F 1391 : 1993 : R2000 Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003)
ASTM F 1241 : 1995 : R2000 Standard Terminology of Silicon Technology (Withdrawn 2003)
ASTM E 168 : 2016 Standard Practices for General Techniques of Infrared Quantitative Analysis

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PDF - English
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