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BS EN 60749-6:2017

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Mechanical and climatic test methods Storage at high temperature

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

24-11-2017

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Summary
Bibliography

Describes the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied.

The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated.

Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.

Committee
EPL/47
DevelopmentNote
Supersedes 01/208602 DC (09/2002) Supersedes BS EN 60749. (09/2005) Supersedes 16/30344796 DC. (11/2017)
DocumentType
Standard
Pages
14
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
DIN EN 60749-6:2016-09 (Draft) Identical
I.S. EN 60749-6:2017 Identical
UNE-EN 60749-6:2003 Identical
NBN EN 60749-6 : 2003 Identical
IEC 60749-6:2017 Identical
EN 60749-6:2017 Identical
NF EN 60749-6 : 2002 Identical

IEC 60749-20:2008 Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
IEC 60749-43:2017 Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans

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