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BS EN 62047-16:2015

BS EN 62047-16:2015

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

31-07-2015

Publisher

British Standards Institution

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.

Committee
EPL/47
DevelopmentNote
Supersedes 14/30259233 DC. (07/2015)
DocumentType
Standard
Pages
18
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
IEC 62047-16:2015 Identical
EN 62047-16:2015 Identical

EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

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Hardcopy - English
PDF - English
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