Semiconductor devices. Hot carrier test on MOS transistors

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

31-07-2010

Publisher

British Standards Institution

1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography

Specifies the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

Committee	EPL/47
DevelopmentNote	Supersedes 07/30163748 DC & 08/30177349 DC. (07/2010)
DocumentType	Standard
Pages	14
PublisherName	British Standards Institution
Status	Current
Supersedes	07/30163748 DC : 0 08/30177349 DC : DRAFT JAN 2008

Standards	Relationship
IEC 62416:2010	Identical
EN 62416 : 2010	Identical

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BS EN 62416:2010

Semiconductor devices. Hot carrier test on MOS transistors

Table of Contents

Abstract

Scope

General Product Information

International Equivalents

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