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CEI EN 60749-34 : 2012

Current
Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING
Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2012

FOREWORD
1 Scope and object
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Test conditions
7 Precautions
8 Measurements
9 Failure criteria
10 Summary
Bibliography

Describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-88. (03/2012)
DocumentType
Standard
Pages
18
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
EN 60749-34:2010 Identical
IEC 60749-34:2010 Identical

EN 60749-23:2004/A1:2011 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60749-23:2004+AMD1:2011 CSV Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

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