EN IEC 60749-17:2019
Current
The latest, up-to-date edition.
10-05-2019
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.The objectives of the test are as follows:a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, andb) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
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