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IEC
IEC 62047-21:2014

IEC 62047-21:2014

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

19-06-2014

Publisher

International Electrotechnical Committee

FOREWORD
1 Scope
2 Normative references
3 Terms, definitions, symbols and designations
4 Test piece
5 Testing method and test apparatus
6 Test report
Annex A (informative) - Measurement example of Poisson's
        ratio using type 1 test piece
Annex B (informative) - Analysis of test results obtained
        from a type 2 test piece
Bibliography

IEC 62047-21:2014 specifies the determination of Poisson's ratio from the test results obtained by the application of uniaxial and biaxial loads to thin-film micro-electromechanical systems (MEMS) materials with lengths and widths less than 10 mm and thicknesses less than 10 µm.

Committee
TC 47/SC 47F
DevelopmentNote
Stability date: 2017. (06/2014)
DocumentType
Standard
Pages
26
PublisherName
International Electrotechnical Committee
Status
Current

BS EN 62047-16:2015 Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
IEC 62047-29:2017 Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
CEI EN 62047-16 : 2016 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS
IEC 62047-16:2015 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
EN 62047-16:2015 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
14/30259233 DC : 0 BS EN 62047-16 ED 1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS; WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS
I.S. EN 62047-16:2015 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS

ASTM E 132 : 2017 : REDLINE Standard Test Method for Poisson’s Ratio at Room Temperature
IEC 62047-8:2011 Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

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Hardcopy - English - French
PDF - English - French
PDF 3 Users - English - French
PDF 5 Users - English - French
PDF 9 Users - English - French
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