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IEC 62416:2010

Current
Current

The latest, up-to-date edition.

Semiconductor devices - Hot carrier test on MOS transistors
Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

26-04-2010

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography

IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

Committee
TC 47
DevelopmentNote
Stability Date: 2020. (12/2017)
DocumentType
Standard
Pages
20
PublisherName
International Electrotechnical Committee
Status
Current

Standards Relationship
NBN EN 62416 : 2010 Identical
NEN EN IEC 62416 : 2010 Identical
I.S. EN 62416:2010 Identical
PN EN 62416 : 2010 Identical
UNE-EN 62416:2010 Identical
BS EN 62416:2010 Identical
CEI EN 62416 : 2011 Identical
EN 62416 : 2010 Identical
DIN EN 62416:2010-12 Identical

IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors

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