Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

22-04-2010

Publisher

International Electrotechnical Committee

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Committee	TC 47
DevelopmentNote	Stability Date: 2020. (12/2017)
DocumentType	Standard
Pages	16
PublisherName	International Electrotechnical Committee
Status	Current

Standards	Relationship
NBN EN 62417 : 2010	Identical
NEN EN IEC 62417 : 2010	Identical
I.S. EN 62417:2010	Identical
PN EN 62417 : 2010	Identical
UNE-EN 62417:2010	Identical
BS EN 62417:2010	Identical
CEI EN 62417 : 2011	Identical
EN 62417 : 2010	Identical
DIN EN 62417:2010-12	Identical

IEC TS 62686-1:2015	Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
PD IEC/TS 62686-1:2015	Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors

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IEC 62417:2010

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