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MIL-M-38510-208 Revision F:2013

Current

Current

The latest, up-to-date edition.

Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon

Available format(s)

PDF

Language(s)

English

Published date

21-08-2013

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Provides the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element.

This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).

DevelopmentNote
Inactive for New Design. (02/2006)
DocumentType
Standard
Pages
55
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

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MIL-PRF-38535 Revision K:2013 Integrated Circuits (Microcircuits) Manufacturing, General Specification for
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