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MIL-PRF-19500-616 Revision H:2015

Current
Current

The latest, up-to-date edition.

Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Dual, Common Cathode or Anode Center Tap, Types 1N6657 Through 1N6659 Quality Levels JAN, JANTX, JANTXV, and JANS
Available format(s)

PDF

Published date

16-07-2015

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes.

This specification covers the performance requirements for a silicon, dual (common anode or common cathode), high voltage, ultrafast power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type.

DevelopmentNote
Supersedes MIL S 19500/616. (02/2000)
DocumentType
Standard
Pages
24
PublisherName
US Military Specs/Standards/Handbooks
Status
Current
Supersedes

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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