Name: MIL-PRF-19500-652 Revision C:2013
Brand: MIL

SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS

Available format(s)

PDF

Language(s)

English

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a high voltage N-channel, enhancement mode, power MOSFET transistor, with avalanche energy maximum ratings (E[AS]) and maximum avalanche current (I[AS]).

Committee	FSC 5961
DocumentType	Standard
Pages	16
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

View more information

Product format

Access your standards online with a subscription

Features

Simple online access to standards, technical information and regulations.
Critical updates of standards and customisable alerts and notifications.
Multi-user online standards collection: secure, flexible and cost effective.

Learn more on subscription solutions

Get in touch with us

MIL-PRF-19500-652 Revision C:2013

SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS

Table of Contents

Abstract

General Product Information

Standards Referencing This Book

Category

Subcategory