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MIL-PRF-19500-687 Revision D:2016

Current
Current

The latest, up-to-date edition.

TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
Available format(s)

PDF

Language(s)

English

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications.

Committee
FSC 5961
DocumentType
Standard
Pages
25
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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PDF - English
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