TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H

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US Military Specs/Standards/Handbooks

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Describes the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.

Committee	FSC 5961
DocumentType	Standard
Pages	40
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-743 Revision C:2015

TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H

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