SN EN 60747-5-3 : 2001

Foreword
1 Scope
2 Normative references
3 Measuring methods for photoemitters
  3.1 Luminous intensity of light-emitting diodes (I[v])
  3.2 Radiant intensity of infrared-emitting diodes (I[e])
  3.3 Peak-emission wavelength (lambda[p]), spectral
       radiation bandwidth (deltalambda), and number of
       longitudinal modes (n[m])
  3.4 Emission source length and width and astigmatism
       of a laser diode without pigtail
  3.5 Half-intensity angle and misalignment angle of
       a photoemitter
4 Measuring methods for photosensitive devices
  4.1 Reverse current under optical radiation of
       photodiodes including devices with or without
       pigtails (I[R(H)] or I[R(E)]), and collector
       current under optical radiation of phototransistors
       (I[C(H)] or I[C(E)])
  4.2 Dark current for photodiodes I[R] and dark currents
       for phototransistors I[CEO], I[ECO], I[EBO]
  4.3 Collector-emitter saturation voltage V[CE(sat)] of
       phototransistors
5 Measuring methods for photocouplers
  5.1 Current transfer ratio (h[F(ctr)])
  5.2 Input-to-output capacitance (C[io])
  5.3 Isolation resistance between input and output
       (r[IO])
  5.4 Isolation test
  5.5 Partial discharges of photocouplers
  5.6 Collector-emitter saturation voltage V[CE(sat)] of
       a photocoupler
  5.7 Switching times t[on], t[off] of a photocoupler
  5.8 Peak off-state current (I[DRM])
  5.9 Peak on-state voltage (V[TM])
  5.10 DC off-state current (I[BD])
  5.11 DC on-state voltage (V[T])
  5.12 Holding current (I[H])
  5.13 Critical rate of rise of off-state voltage (dV/dt)
  5.14 Trigger input current (I[FT])
  5.15 Testing methods of electrical rating for
       phototriac coupler
Annex A (informative) Cross references index