Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET

International Electrotechnical Committee

Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

International Electrotechnical Committee

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

International Electrotechnical Committee

SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS

International Electrotechnical Committee

Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

International Electrotechnical Committee

SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS

International Electrotechnical Committee

Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor

International Electrotechnical Committee

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics

American Society for Testing and Materials

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Netherlands Standards

Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)

British Standards Institution