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Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET
International Electrotechnical Committee
Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS
Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
American Society for Testing and Materials
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
Netherlands Standards
Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)
British Standards Institution
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