BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)

Available format(s)

Hardcopy , PDF

Language(s)

English

Publisher

British Standards Institution

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Annex A (normative) - Measuring method for collector-emitter
        breakdown voltage
Annex B (normative) - Measuring method for collector-emitter
        sustaining voltage
Annex C (normative) - Measuring method for inductive
        load turn-off current under specified conditions
Annex D (normative) - Forward biased safe operating
        area (FBSOA)
Bibliography

BS EN 60747-9.

Committee	EPL/47
DocumentType	Draft
Pages	76
PublisherName	British Standards Institution
Status	NA

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