ASTM F 108 : 1988 : EDT 1

Name: ASTM F 108 : 1988 : EDT 1
Brand: ASTM
Price: 75.00 USD

Superseded

Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993)

Available format(s)

Hardcopy , PDF

Superseded date

08-21-2021

Language(s)

English

Published date

01-01-2014

Publisher

American Society for Testing and Materials

CONTAINED IN VOL 10.05 1996 Measures electrical resistivity of silicon epitaxial layers with surface perfection suitable for semiconductor device fabrication deposited on single-crystal substrates of lower resistivity and same conductivity type.

DocumentType	Test Method
Pages	6
ProductNote	e1 NOTE-Figures 1,2,3, and 5 were editorially renumbered in August 1989.
PublisherName	American Society for Testing and Materials
Status	Superseded
Supersedes	ASTM F 108 : 1988

ASTM E 177 : 2014 : REDLINE	Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods
ASTM F 95 : 1989 : R2000	Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
ASTM D 1125 : 2014 : REDLINE	Standard Test Methods for Electrical Conductivity and Resistivity of Water (Withdrawn 2023)