Name: ASTM F 616M : 1996 : R2003
Brand: ASTM
Price: 66.00 USD

ASTM F 616M : 1996 : R2003

Withdrawn

Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)

Available format(s)

Hardcopy , PDF

Withdrawn date

12-31-2009

Language(s)

English

Published date

06-10-1996

Publisher

American Society for Testing and Materials

CONTAINED IN VOL. 10.04, 2009 Covers the measurement of MOSFET drain leakage current and is applicable to all enhancement-mode and depletion-mode MOSFETs.

1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.

Note 1—MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.

1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee	F 01
DocumentType	Test Method
Pages	3
ProductNote	Reconfirmed 2003
PublisherName	American Society for Testing and Materials
Status	Withdrawn
Supersedes	ASTM F 616M : 1996