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IEC 60747-9:2007

Superseded
Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by
superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Superseded date

12-31-2021

Language(s)

English - French

Published date

09-26-2007

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
  3.1 Graphical symbol of IGBT
  3.2 General terms
  3.3 Terms related to ratings and characteristics;
      voltages and currents
  3.4 Terms related to ratings and characteristics;
      other characteristics
4 Letter symbols
  4.1 General
  4.2 Additional general subscripts
  4.3 List of letter symbols
5 Essential ratings and characteristics
  5.1 Ratings (limiting values)
  5.2 Characteristics
6 Measuring methods
  6.1 General
  6.2 Verification of ratings (limiting values)
  6.3 Methods of measurement
7 Acceptance and reliability
  7.1 General requirements
  7.2 Specific requirements
  7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
                    breakdown voltage
Annex B (normative) Measuring method for inductive load
                    turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).The major changes with respect to the previous edition are mainly of an editorial nature.

Committee
TC 47/SC 47E
DevelopmentNote
To be read in conjunction with IEC 60747-1 (01/2003) Stability Date: 2017. (10/2012)
DocumentType
Standard
ISBN
2-8318-9321-6
Pages
117
PublisherName
International Electrotechnical Committee
Status
Superseded
SupersededBy
Supersedes

Standards Relationship
NEN IEC 60747-9 : 2007 Identical
BS IEC 60747-9:2007 Identical
SAC GB/T 29332 : 2012 Identical

BS EN 62747:2014 Terminology for voltage-sourced converters (VSC) for high-voltage direct current (HVDC) systems
CEI EN 60747-15 : 2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
I.S. EN 62751-1:2014 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
NF EN 62751-1 : 2015 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
EN 62747:2014/AC:2015 TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS (IEC 62747:2014)
I.S. EN 62747:2014-2015-10 TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS
DIN IEC/TR 62543 : 2018 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017)
VDE 0553-543 : 2018 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017)
01/206102 DC : DRAFT JUL 2001 IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS
07/30162213 DC : 0 BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
12/30251416 DC : 0 BS EN 62747 - TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HVDC SYSTEMS
I.S. EN 60747-15:2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
BS EN 62751-1:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems General requirements
BS EN 60747-15:2012 Semiconductor devices. Discrete devices Isolated power semiconductor devices
I.S. EN 62751-2:2014 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
BS PD IEC TR 62543 : 2011 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC)
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
12/30253588 DC : 0 BS EN 62751-2 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HVDC SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
04/30114936 DC : DRAFT JUN 2004 EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
BS EN 62751-2:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems Modular multilevel converters
EN 62751-1:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements
EN 62751-2:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters
IEC 62751-2:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters
12/30252799 DC : 0 BS EN 62751-1-1 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTERS (VSC) FOR HV DC SYSTEMS - PART 1: GENERAL REQUIREMENTS
IEC 62751-1:2014+AMD1:2018 CSV Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements
IEC TR 62543:2011+AMD1:2013 CSV High-voltage direct current (HVDC) power transmission using voltage sourced converters (VSC)
IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes

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