Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

08-29-2016

Publisher

International Electrotechnical Committee

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Committee	TC 47/SC 47F
DevelopmentNote	Stability Date: 2019. (09/2016)
DocumentType	Standard
Pages	45
PublisherName	International Electrotechnical Committee
Status	Current

Standards	Relationship
NF EN 62047-25 : 2016	Identical
NEN EN IEC 62047-25 : 2016	Identical
PN EN 62047-25 : 2017	Identical
SN EN 62047-25 : 2016	Identical
BS EN 62047-25:2016	Identical
CEI EN 62047-25 : 1ED 2017	Identical
DIN EN 62047-25:2014-05 (Draft)	Identical
UNE-EN 62047-25:2016	Identical

IEC 62047-1:2016	Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
ISO 10012:2003	Measurement management systems — Requirements for measurement processes and measuring equipment