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ASTM F 996 : 2011 : R2018

Current
Current

The latest, up-to-date edition.

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

04-10-2018

CONTAINED IN VOL. 10.04, 2018 Defines the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.

1.1This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.2,3,4 The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔV it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

1.2Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

1.3The application of this test method requires the MOSFET to have a substrate (body) contact.

1.4Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

1.5The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.6This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.

1.7This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Committee
F 01
DocumentType
Test Method
Pages
7
ProductNote
Reconfirmed 2018
PublisherName
American Society for Testing and Materials
Status
Current
Supersedes

ASTM F 1892 : 2012 : R2018 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

ASTM E 1249 : 2010 Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 1249 : 2015 : R2021 Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 1249 : 2000 : R2005 Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 1894 : 2013 : REV A Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
ASTM E 1894 : 2018 Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
ASTM E 668 : 2013 : REDLINE Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
ASTM E 1249 : 2015 Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 666 : 2021 Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation
ASTM E 1249 : 2015 : REDLINE Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 1894 : 1997 Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
ASTM E 1894 : 2008 Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
ASTM E 1249 : 2000 Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 666 : 2014 : REDLINE Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation
ASTM E 666 : 2014 Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation

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