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BS EN 62047-25:2016

Current
Current

The latest, up-to-date edition.

Semiconductor devices. Micro-electromechanical devices Silicon based MEMS fabrication technology. Measurement method of pull-press and shearing strength of micro bonding area
Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

11-30-2016

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Requirements
5 Testing method
Annex A (informative) - Dimensions for testing
        structure and tensile/compressive strength
Annex B (informative) - Pull-press testing method
        example
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Defines the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS).

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Committee
EPL/47
DevelopmentNote
Supersedes 14/30296140 DC. (11/2016)
DocumentType
Standard
Pages
28
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
IEC 62047-25:2016 Identical

EN 62047-1:2016 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
IEC 62047-1:2016 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
ISO 10012:2003 Measurement management systems — Requirements for measurement processes and measuring equipment
EN ISO 10012:2003 Measurement management systems - Requirements for measurement processes and measuring equipment (ISO 10012:2003)

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