• There are no items in your cart

BS EN 62047-9:2011

Current
Current

The latest, up-to-date edition.

Semiconductor devices. Micro-electromechanical devices Wafer to wafer bonding strength measurement for MEMS
Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-31-2013

1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding
        force
Annex B (informative) - An example of the
        fabrication process for three-point
        bending specimens
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Specifies bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly.

This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 µm to several millimeters.

Committee
EPL/47
DevelopmentNote
Supersedes 07/30172404 DC. (09/2011)
DocumentType
Standard
Pages
32
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
IEC 62047-9:2011/COR1:2012 Identical
IEC 62047-9:2011 Identical
EN 62047-9:2011 Identical

IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
EN ISO 6892-1:2016 Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016)
ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 60749-19:2003/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
ASTM E 8M : 2004 Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
EN 62047-4:2010 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

View more information
US$237.18
Excluding Tax where applicable

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.