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IEC 60747-7:2010

IEC 60747-7:2010

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

Amended by

IEC 60747-7:2010/AMD1:2019

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Superseded date

09-25-2019

Language(s)

English - French

Published date

12-16-2010

Publisher

International Electrotechnical Committee

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Annex A (informative) - Determination of the SOA

IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.
- Small signal transistors (excluding switching and microwave applications);
- Linear power transistors (excluding switching, high-frequency, and microwave applications);
- High-frequency power transistors for amplifier and oscillator applications;
- Switching transistors for high speed switching and power switching applications;
- Resistor biased transistors. The main changes with respect to previous edition are listed below.
a) Clause 1 was amended by adding an item that should be included.
b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
c) The text of the second edition was combined with that of IEC 60747-7-5.

This publication is to be read in conjunction with IEC 60747-1:2006.

Committee
TC 47/SC 47E
DevelopmentNote
To be read in conjunction with IEC 60747-1. Supersedes IEC 60747-7-5. (12/2010) Stability Date: 2018. (09/2017) NEW CHILD AMD 1 2019 IS NOW ADDED
DocumentType
Standard
Pages
219
ProductNote
NEW CHILD AMD 1 2019 IS NOW ADDED
PublisherName
International Electrotechnical Committee
Status
Superseded
SupersededBy
Supersedes

Standards Relationship
NEN IEC 60747-7 : 2011 Identical
BS IEC 60747-7:2010 Identical
IS 14901 : Part 7 : 2020 Identical
BS 6493-1.7:1989 Identical
DIN IEC 60747-7:1997-12 Identical
NFC 96 007 : 1989 Identical

07/30161967 DC : 0 BS EN 60747-8 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS
14/30311054 DC : 0 BS EN 60747-4: AMD 1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
CEI EN 60747-15 : 2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
I.S. EN 60747-15:2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
BS IEC 60747-9:2007 Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)
BS EN 60747-16-1 : 2002 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
IEC 60747-7-5:2005 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications
07/30162213 DC : 0 BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
BS IEC 60747-4 : 2007 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
BS EN 60747-15:2012 Semiconductor devices. Discrete devices Isolated power semiconductor devices
17/30343732 DC : 0 BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
BS 6493-2.3:1987 Semiconductor devices. Integrated circuits Recommendations for analogue integrated circuits
BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
CEI EN 60747-16-1 : 2009 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
BS IEC 60747-7-5:2005 Semiconductor devices. Discrete devices Bipolar transistors for power switching applications
14/30311058 DC : 0 BS EN 60747-16-1:AMD 2 - SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
04/30114936 DC : DRAFT JUN 2004 EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
IEC 60747-4:2007+AMD1:2017 CSV Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
IEC 61747-1:1998+AMD1:2003 CSV Liquid crystal and solid-state display devices - Part 1: Generic specification
EN 60747-16-1:2002/A2:2017 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS (IEC 60747-16-1:2001/A2:2017)
IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

IEC 60747-4:2007+AMD1:2017 CSV Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits

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Hardcopy - English - French
PDF - English - French
PDF 3 Users - English - French
PDF 5 Users - English - French
PDF 9 Users - English - French
Hardcopy - English - French
PDF - English - French
PDF 3 Users - English - French
PDF 5 Users - English - French
PDF 9 Users - English - French
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