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IEC 60749-23:2004+AMD1:2011 CSV

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English, English - French

Published date

03-30-2011

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary

IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.

Committee
TC 47
DevelopmentNote
Supersedes IEC PAS 62189. (08/2004) Stability Date: 2020. (09/2017)
DocumentType
Standard
Pages
22
PublisherName
International Electrotechnical Committee
Status
Current
Supersedes

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I.S. EN 60749-34:2010 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING
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I.S. EN 60749-43:2017 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 43: GUIDELINES FOR IC RELIABILITY QUALIFICATION PLANS
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
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EN 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
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02/207672 DC : DRAFT JULY 2002 IEC 60749-34 ED.1 - POWER CYCLING
EN 60749-43:2017 Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans
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BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
15/30269562 DC : 0 BS EN 60749-43 - SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 43: GUIDELINES FOR LSI RELIABILITY QUALIFICATION PLANS
CEI EN 60749-43 : 1ED 2018 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 43: GUIDELINES FOR IC RELIABILITY QUALIFICATION PLANS
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
UNE-EN 60749-34:2011 Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors
13/30264596 DC : 0 BS EN 60747-14-7 ED 1.0 - SEMICONDUCTOR DEVICES - PART 14-7: SEMICONDUCTOR SENSORS - FLOW METER
IEC 60749-43:2017 Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans

IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

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