IEC 62373-1:2020
Current
The latest, up-to-date edition.
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
07-15-2020
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
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