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MIL-M-38510-209 Revision H:2014

Current

Current

The latest, up-to-date edition.

Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon

Available format(s)

PDF

Language(s)

English

Published date

04-21-2014

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element.

This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).

DevelopmentNote
Inactive for New Design. (02/2006)
DocumentType
Standard
Pages
68
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

MIL-STD-883 Revision K:2016 TEST METHOD STANDARD - MICROCIRCUITS
MIL-PRF-38535 Revision K:2013 Integrated Circuits (Microcircuits) Manufacturing, General Specification for
MIL-STD-1835 Revision D:2004 ELECTRONIC COMPONENT CASE OUTLINES

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