MIL-PRF-19500-296 Revision F:2012

Superseded

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB

Available format(s)

PDF

Superseded date

02-06-2020

Language(s)

English

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Defines the performance requirements for P-channel, junction, silicon field-effect transistors.

Committee	FSC 5961
DevelopmentNote	Supersedes MIL S 19500/296. (10/2001) Inactive for new design. (03/2003)
DocumentType	Standard
Pages	12
PublisherName	US Military Specs/Standards/Handbooks
Status	Superseded
SupersededBy	MIL-PRF-19500-296 Revision G:2020
Supersedes	MIL S 19500/296 : B

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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