Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Device Types 1N5415 Through 1N5420, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC

Available format(s)

PDF

Language(s)

English

Published date

09-19-2016

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for silicon rectifier diodes.

This specification covers the performance requirements for fast recovery silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each un encapsulated device type. Provision for radiation hardness assurance (RHA) to four radiation (\"M\", \"D\", \"R\", and \"H\") test levels is provided for JANTXV and JANS product assurance levels.

DevelopmentNote	Supersedes MIL S 19500/411 (02/2000)
DocumentType	Standard
Pages	23
PublisherName	US Military Specs/Standards/Handbooks
Status	Current
Supersedes	MIL S 19500/411 : G

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-411 Revision T:2016

Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Device Types 1N5415 Through 1N5420, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC

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