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MIL-PRF-19500-547 Revision D:2011

Current

Current

The latest, up-to-date edition.

Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS

Available format(s)

PDF

Published date

08-29-2011

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor.

This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500.

DevelopmentNote
Supersedes MIL S 19500/547. (02/2000) D NOTICE 1 - Notice of Validation. (07/2016)
DocumentType
Standard
Pages
17
PublisherName
US Military Specs/Standards/Handbooks
Status
Current
Supersedes

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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