Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and JANS M, D, R, and F

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PDF

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English

Published date

01-18-2017

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications.

This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (\"M\", \"D\", \"R\" and \"F\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

DevelopmentNote	SUPERSEDES MIL S 19500/615 (02/2000)
DocumentType	Standard
Pages	24
PublisherName	US Military Specs/Standards/Handbooks
Status	Current
Supersedes	MIL S 19500/615 : 0

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-615 Revision H:2017

Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and JANS M, D, R, and F

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