MIL-PRF-19500-634 Revision D:2013

Superseded

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR

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PDF

Superseded date

06-24-2020

Language(s)

English

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor intended for use in high density power switching applications.

Committee	FSC 5961
DocumentType	Standard
Pages	23
PublisherName	US Military Specs/Standards/Handbooks
Status	Superseded
SupersededBy	MIL-PRF-19500-634 Revision E:2019

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-634 Revision D:2013

Superseded

Table of Contents

Abstract

General Product Information

Standards Referencing This Book

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Subcategory

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