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MIL-PRF-19500-638 Revision B:2004

MIL-PRF-19500-638 Revision B:2004

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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR

Available format(s)

PDF

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Covers performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.

Committee
FSC 5961
DevelopmentNote
B NOTICE 1 - Notice of Validation. (07/2011) B NOTICE 2 - Notice of Validation. (05/2016)
DocumentType
Standard
Pages
22
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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PDF - English

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