TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR

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US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (E[AS]) and maximum avalanche current (I[AS]) for use in particular power-switching applications.

Committee	FSC 5961
DocumentType	Standard
Pages	24
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-685 Revision H:2016

TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR

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