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MIL-PRF-19500-755 Revision A:2017

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Transistor, Field Effect, N-Channel, Radiation Hardened,Silicon, Encapsulated (Through Hole Package), Types 2N7588, 2N7590, 2N7592, and2N7594, JANTXVR and F and JANSR, F, and G

Available format(s)

PDF

Superseded date

06-24-2020

Published date

09-14-2017

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.

This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to three radiation levels (\"R\", \"F\", and “G”) are provided for JANTXV and JANS product assurance levels.

DocumentType
Standard
Pages
46
PublisherName
US Military Specs/Standards/Handbooks
Status
Superseded

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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