Semiconductor Device, Diode, Silicon, Schottky, Device Type 1N7059 (Dual, Center Tap) and 1N7060(Single), Quality Levels JAN, JANTX, JANTXV, and JANS

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PDF

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English

Published date

12-20-2013

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for silicon, schottky power rectifier diodes.

This specification covers the performance requirements for silicon, Schottky power rectifier diodes in either single or dual center tap configurations. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.

DocumentType	Standard
Pages	20
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-771 Revision A:2013

Semiconductor Device, Diode, Silicon, Schottky, Device Type 1N7059 (Dual, Center Tap) and 1N7060(Single), Quality Levels JAN, JANTX, JANTXV, and JANS

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