MIL-STD-989 Base Document:1991

Withdrawn

CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES

Available format(s)

PDF

Withdrawn date

07-28-1995

Language(s)

English

Publisher

US Military Specs/Standards/Handbooks

Establishes the minimum requirements for the certification of manufacturing facilities/lines used in fabricating, assembling and testing high reliability JAN semiconductors in accordance with MIL-S-19500.

Committee	FSC 5961
DocumentType	Standard
Pages	36
PublisherName	US Military Specs/Standards/Handbooks
Status	Withdrawn

DOD 4120.3M : 1993

DEFENSE STANDARDIZATION PROGRAM (DSP) POLICIES AND PROCEDURES OFFICE OF THE ASSISTANT SECRETARY OF DEFENSE PRODUCTION AND LOGISTICS

ASTM F 671 : 1999	Standard Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials (Withdrawn 2003)
ASTM F 613 : 1993	Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
ASTM F 416 : 1994	Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
MIL-STD-1686 Revision C:1995	ELECTROSTATIC DISCHARGE CONTROL PROGRAM FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS, ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOSIVE DEVICES)
MIL-STD-45662 Revision A:1988	CALIBRATION SYSTEMS REQUIREMENTS
MIL-HDBK-279 Base Document:1985	TOTAL DOSE HARDNESS ASSURANCE GUIDELINE FOR SEMICONDUCTOR DEVICE & MICROCIRCUIT
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES
DOD HDBK 263 : LATEST	ELECTROSTATIC DISCHARGE CONTROL HANDBOOK FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS, ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOSIVE DEVICES)METRIC
MIL S 19500 : J	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
ASTM F 657 : 1992 : R1999	Standard Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 2003)
ASTM F 43 : 1999	Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003)
ASTM F 120 : 1988	Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)
MIL-HDBK-280 Base Document:1985	NEUTRON HARDNESS ASSURANCE GUIDELINES FOR SEMICONDUCTOR DEVICES AND MICROCIRCUITS
ASTM F 47 : 1994	Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998)
ASTM F 121 : 1983 : EDT 1	Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1989)