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SEMI M51 : 2012

Current
Current

The latest, up-to-date edition.

TEST METHOD FOR CHARACTERIZING SILICON WAFER BY GATE OXIDE INTEGRITY
Published date

01-12-2013

Specifies procedures for characterizing silicon wafers to determine gate oxide integrity (GOI).

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (06/2002)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

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