ASTM F 416 : 1994
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
02-18-2021
12-31-2010
CONTAINED IN VOL 10.05 1997 Detects crystalline defects in surface region of silicon wafers induced or enhanced by oxidation cycles in device processing. Includes atmospheric pressure oxidation cycles representative of bipolar, MOS and CMOS technologies. Reveals strain fields arising from precipitates, dislocations, oxidation induced or pre-existing stacking faults, and shallow etch pits.
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