ASTM F 996 : 2011

Name: ASTM F 996 : 2011
Brand: ASTM
Price: 75.00 USD

Superseded

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Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Available format(s)

Hardcopy , PDF

Superseded date

12-03-2023

Language(s)

English

Published date

01-01-2011

Publisher

American Society for Testing and Materials

CONTAINED IN VOL. 10.04, 2018 Defines the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.

1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. ^, ^, The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔV_INV into voltage shifts due to oxide trapped charge, ΔV_ot and interface traps, ΔV_it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.

1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee	F 01
DocumentType	Test Method
Pages	7
ProductNote	Reconfirmed 2011
PublisherName	American Society for Testing and Materials
Status	Superseded
SupersededBy	ASTM F 996 : 2011 : R2018
Supersedes	ASTM F 996 : 2010

ASTM E 668 : 2013 : REDLINE	Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
ASTM E 1249 : 2015 : REDLINE	Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
ASTM E 666 : 2014 : REDLINE	Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation