SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE

Amended by

BS EN 60749-23:2004+A1:2011

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2004

Publisher

British Standards Institution

1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications

Specifies the effects of bias conditions and temperature on solid state devices over time.

Committee	EPL/47/1
DevelopmentNote	Supersedes 02/206196 DC. (10/2004) 2004 Edition Re-Issued in June 2011 & incorporates AMD 1 2011. Supersedes 09/30208089 DC. (06/2011)
DocumentType	Standard
Pages	12
PublisherName	British Standards Institution
Status	Current
Supersedes	02/206196 DC : DRAFT MAY 2002 09/30208089 DC : 0

Standards	Relationship
DIN EN 60749-23:2011-07	Identical
IEC 60749-23:2004+AMD1:2011 CSV	Identical
NBN EN 60749-23 : 2005 AMD 1 2011	Identical
NF EN 60749-23 : 2004 AMD 1 2012	Identical
I.S. EN 60749-23:2004	Identical
EN 60749-23:2004/A1:2011	Identical
UNE-EN 60749-23:2005	Identical

EN 60749-34:2010	Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
IEC 60749-34:2010	Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

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BS EN 60749-23 : 2004

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE

Table of Contents

Abstract

General Product Information

International Equivalents

Standards Referencing This Book

Category

Subcategory