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BS EN 62374:2007

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Time dependent dielectric breakdown (TDDB) test for gate dielectric films

Published date

10-31-2008

1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
  4.1 General
  4.2 Test structure: capacitor structure
  4.3 Area
5 Procedures
  5.1 General
  5.2 Pre-test
  5.3 Test conditions
  5.4 Criteria
6 Lifetime estimation
  6.1 General
  6.2 Acceleration model
  6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
        condition and data analysis
Bibliography

Gives a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.

Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure

Committee
EPL/47
DevelopmentNote
Supersedes 04/30113827 DC. (10/2008) Earlier was withdrawn (superseded by BS EN 62374-1) in error by publisher, now has been re-instated. (06/2011)
DocumentType
Standard
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
EN 62374:2007 Identical
IEC 62374:2007 Identical

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