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BS ISO 12406:2010

Current
Current

The latest, up-to-date edition.

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

11-30-2010

Publisher

British Standards Institution

Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Principle
6 Reference materials
7 Apparatus
8 Specimen
9 Procedures
10 Expression of results
11 Test report
Annex A (informative) - Report of round robin test of depth
        profiling of arsenic in silicon
Annex B (normative) - Procedures for the depth profiling of
        NIST SRM 2134
Bibliography

Describes a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration.

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1×1016 atoms/cm3 and 2,5×1021 atoms/cm3, and to crater depths of 50nm or deeper.

Committee
CII/60
DevelopmentNote
Supersedes 10/30199169 DC. (11/2010) Reviewed and confirmed by BSI, August 2016. (07/2016)
DocumentType
Standard
Pages
24
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
ISO 12406:2010 Identical

ISO 18114:2003 Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials
ISO 18115-1:2013 Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy
ISO 14237:2010 Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials
ISO 17560:2014 Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of boron in silicon
ISO 5725-2:1994 Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method

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Hardcopy - English
PDF - English
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